发明申请
- 专利标题： COATING LAYER FOR A CONDUCTIVE STRUCTURE
- 专利标题（中）： 涂层为导电结构
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申请号： US14525855申请日： 2014-10-28
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公开(公告)号： US20150214177A1公开(公告)日： 2015-07-30
- 发明人: Rama I. Hegde
- 申请人： Freescale Semiconductor, Inc.
- 主分类号： H01L23/00
- IPC分类号： H01L23/00 ; H01L21/48 ; H01L23/495
摘要：
A coating layer for use in copper integrated circuit interconnect and other conductive structures hinders and decreases oxide growth on surfaces of such conductive structures. The coating layer includes an amorphous copper containing layer deposited on a crystalline copper substrate, such as utilized for a lead frame and a bonding wire. Additional amorphous layers may be interposed between the amorphous copper containing layer and the copper substrate, such as an amorphous tantalum nitride layer and an amorphous titanium nitride layer.
公开/授权文献
- US09337164B2 Coating layer for a conductive structure 公开/授权日：2016-05-10
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