发明申请
US20150218006A1 SUBSTRATE HAVING AT LEAST ONE PARTIALLY OR ENTIRELY FLAT SURFACE, AND USE THEREOF
审中-公开
具有至少一个部分或完整平面的基材及其使用
- 专利标题: SUBSTRATE HAVING AT LEAST ONE PARTIALLY OR ENTIRELY FLAT SURFACE, AND USE THEREOF
- 专利标题(中): 具有至少一个部分或完整平面的基材及其使用
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申请号: US14408139申请日: 2012-06-15
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公开(公告)号: US20150218006A1公开(公告)日: 2015-08-06
- 发明人: Kyung Byung Yoon , Cao Thanh Tung Pham , Hyun Sung Kim
- 申请人: Kyung Byung Yoon , Cao Thanh Tung Pham , Hyun Sung Kim
- 申请人地址: KR Samseong-ro Gangnam-gu Seoul
- 专利权人: INTELLECTUAL DISCOVERY CO., LTD.
- 当前专利权人: INTELLECTUAL DISCOVERY CO., LTD.
- 当前专利权人地址: KR Samseong-ro Gangnam-gu Seoul
- 国际申请: PCT/KR2012/004724 WO 20120615
- 主分类号: C01B39/02
- IPC分类号: C01B39/02
摘要:
A substrate, at least one surface of which is partially or entirely flat, the substrate having: a substrate molded from first substrate-forming particles; second substrate-forming particles partially or entirely filled into first pores which are formed by the first substrate-forming particles on at least one surface of the substrate; and a polymer partially or entirely filled into second pores remaining in a region in which the second substrate-forming particles are filled. Also disclosed is a method for preparing a thin or thick film, including the aligning non-spherical seed crystals on a flat portion of at least one surface of the substrate such that an a-axis, a b-axis, and/or a c-axis are oriented according to a certain rule; and exposing the aligned seed crystals to a solution for enabling the growth of the seed crystals to thereby form and grow a film from the seed crystals using a secondary growing technique.
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