Invention Application
- Patent Title: MEMORY CONTROLLERS AND FLASH MEMORY READING METHODS
- Patent Title (中): 存储控制器和闪存存储器读取方法
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Application No.: US14601659Application Date: 2015-01-21
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Publication No.: US20150220389A1Publication Date: 2015-08-06
- Inventor: Kyung-jin KIM , Ung-hwan KIM , Eun-cheol KIM , Jun-jin KONG , Se-jin LIM
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2014-0012214 20140203
- Main IPC: G06F11/10
- IPC: G06F11/10 ; H03M13/37

Abstract:
A method of reading multi-bit data stored in a memory cell of a flash memory includes attempting to perform hard decision (HD) decoding on output data from the flash memory, and performing soft decision (SD) decoding on the output data when the HD decoding cannot be performed. The performing of the SD decoding includes: changing a maximum number of iterations according to a threshold voltage distribution of the memory cell; and performing the SD decoding based on the changed maximum number of iterations.
Public/Granted literature
- US09647695B2 Memory controllers and flash memory reading methods Public/Granted day:2017-05-09
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