Invention Application
US20150221544A1 METHOD FOR SEPARATING AT LEAST TWO SUBSTRATES ALONG A SELECTED INTERFACE
有权
在选择的界面上分离最少两个基板的方法
- Patent Title: METHOD FOR SEPARATING AT LEAST TWO SUBSTRATES ALONG A SELECTED INTERFACE
- Patent Title (中): 在选择的界面上分离最少两个基板的方法
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Application No.: US14424311Application Date: 2013-09-04
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Publication No.: US20150221544A1Publication Date: 2015-08-06
- Inventor: Didier Landru , Christophe Figuet
- Applicant: Soitec
- Priority: FR1258403 20120907
- International Application: PCT/IB2013/001937 WO 20130904
- Main IPC: H01L21/762
- IPC: H01L21/762

Abstract:
A process for separating at least two substrates comprising at least two separation interfaces along one of the interfaces includes, before inserting a blade between the substrate, damaging at least one portion of a peripheral region of a chosen one of the interfaces, then inserting the blade and partially parting the substrates, and applying a fluid in a space between the parted substrates while the blade remains inserted therebetween, and decreasing a rupture energy of the chosen interface by stress corrosion involving breaking of siloxane bonds present at the interface.
Public/Granted literature
- US09437473B2 Method for separating at least two substrates along a selected interface Public/Granted day:2016-09-06
Information query
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