Invention Application
US20150236579A1 CURRENT GENERATION CIRCUITS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME 有权
电流发生电路和包括其的半导体器件

  • Patent Title: CURRENT GENERATION CIRCUITS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
  • Patent Title (中): 电流发生电路和包括其的半导体器件
  • Application No.: US14446039
    Application Date: 2014-07-29
  • Publication No.: US20150236579A1
    Publication Date: 2015-08-20
  • Inventor: Hae Rang CHOI
  • Applicant: SK hynix Inc.
  • Priority: KR10-2014-0019709 20140220
  • Main IPC: H02M1/08
  • IPC: H02M1/08 H02M3/156
CURRENT GENERATION CIRCUITS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
Abstract:
Semiconductor devices are provided. The semiconductor device may include a current generation circuit and an internal circuit. The current generation circuit may include a first drive element and a second drive element which are connected in series. The current generation circuit may generate a reference voltage signal whose voltage level is set by a reference current which is identical or substantially identical to a current flowing through the first and second drive elements. The internal circuit may utilize an output current controlled according to the reference current as an operation current thereof.
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