Invention Application
- Patent Title: CURRENT GENERATION CIRCUITS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
- Patent Title (中): 电流发生电路和包括其的半导体器件
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Application No.: US14446039Application Date: 2014-07-29
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Publication No.: US20150236579A1Publication Date: 2015-08-20
- Inventor: Hae Rang CHOI
- Applicant: SK hynix Inc.
- Priority: KR10-2014-0019709 20140220
- Main IPC: H02M1/08
- IPC: H02M1/08 ; H02M3/156

Abstract:
Semiconductor devices are provided. The semiconductor device may include a current generation circuit and an internal circuit. The current generation circuit may include a first drive element and a second drive element which are connected in series. The current generation circuit may generate a reference voltage signal whose voltage level is set by a reference current which is identical or substantially identical to a current flowing through the first and second drive elements. The internal circuit may utilize an output current controlled according to the reference current as an operation current thereof.
Public/Granted literature
- US09836074B2 Current generation circuits and semiconductor devices including the same Public/Granted day:2017-12-05
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