发明申请
- 专利标题： Control of FET Back-Channel Interface Characteristics
- 专利标题（中）： FET后通道接口特性的控制
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申请号： US14192728申请日： 2014-02-27
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公开(公告)号： US20150243548A1公开(公告)日： 2015-08-27
- 发明人: Anthony Mark Miscione , James S. Cable
- 申请人： PEREGRINE SEMICONDUCTOR CORPORATION
- 申请人地址： US CA San Diego
- 专利权人： PEREGRINE SEMICONDUCTOR CORPORATION
- 当前专利权人： PEREGRINE SEMICONDUCTOR CORPORATION
- 当前专利权人地址： US CA San Diego
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/265 ; H01L29/78
摘要：
A method and structure for control of FET back-channel interface characteristics of an integrated circuit by implanting of selected implantation species at or near a device interface accessible during manufacture of the integrated circuit using layer transfer technology, without adversely affecting the structure or characteristics of a principal front-side FET.
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IPC分类:
