Invention Application
- Patent Title: PULSE GENERATION CIRCUIT AND SEMICONDUCTOR DEVICE
- Patent Title (中): 脉冲发生电路和半导体器件
-
Application No.: US14714473Application Date: 2015-05-18
-
Publication No.: US20150248869A1Publication Date: 2015-09-03
- Inventor: Hiroyuki MIYAKE , Kouhei TOYOTAKA
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Priority: JP2013-078202 20130404
- Main IPC: G09G3/36
- IPC: G09G3/36 ; G09G5/18

Abstract:
Two gate drivers each comprising a shift register and a demultiplexer including single conductivity type transistors are provided on left and right sides of a pixel portion. Gate lines are alternately connected to the left-side and right-side gate drivers in every M rows. The shift register includes k first unit circuits connected in cascade. The demultiplexer includes k second unit circuits to each of which a signal is input from the first unit circuit and to each of which M gate lines are connected. The second unit circuit selects one or more wirings which output an input signal from the first unit circuit among M gate lines, and outputs the signal from the first unit circuit to the selected wiring(s). Since gate signals can be output from an output of a one-stage shift register to the M gate lines, the width of the shift register can be narrowed.
Public/Granted literature
- US09478187B2 Pulse generation circuit and semiconductor device Public/Granted day:2016-10-25
Information query
IPC分类: