Invention Application
US20150255331A1 INTEGRATED CIRCUITS WITH A COPPER AND MANGANESE COMPONENT AND METHODS FOR PRODUCING SUCH INTEGRATED CIRCUITS
审中-公开
具有铜和锰成分的集成电路以及生产这种集成电路的方法
- Patent Title: INTEGRATED CIRCUITS WITH A COPPER AND MANGANESE COMPONENT AND METHODS FOR PRODUCING SUCH INTEGRATED CIRCUITS
- Patent Title (中): 具有铜和锰成分的集成电路以及生产这种集成电路的方法
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Application No.: US14196842Application Date: 2014-03-04
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Publication No.: US20150255331A1Publication Date: 2015-09-10
- Inventor: Xunyuan Zhang , Hoon Kim , Moosung M. Chae
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/482 ; H01L23/48
Abstract:
Integrated circuits with copper and magnesium components and methods for producing such integrated circuits are provided. A method of producing the integrated circuits includes forming an aperture in an interlayer dielectric. A seed layer is formed in the aperture, where the seed layer includes manganese and copper, and where the seed layer has a copper concentration gradient. A core is formed overlying the seed layer, where the core includes copper.
Information query
IPC分类:
