Invention Application
- Patent Title: Semiconductor Device and Method of Making the Same
- Patent Title (中): 半导体器件及其制造方法
-
Application No.: US14716200Application Date: 2015-05-19
-
Publication No.: US20150255597A1Publication Date: 2015-09-10
- Inventor: Albert Birner , Helmut Brech
- Applicant: INFINEON TECHNOLOGIES AG
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/04 ; H01L29/10 ; H01L29/167
Abstract:
A semiconductor device includes a drift region in a first region of a semiconductor body. The drift region includes dopants of a first conductivity type. A dopant retarding region is formed at least adjacent an edge of the drift region. Dopants of a second conductivity type are implanted into the semiconductor body. The semiconductor body is annealed to form a body region so that dopants of the second conductivity type are driven into the semiconductor body at a first diffusion rate. The dopant retarding region prevents the dopants from diffusing into the drift region at the first diffusion rate.
Public/Granted literature
- US09269807B2 Semiconductor device and method of making the same Public/Granted day:2016-02-23
Information query
IPC分类:
