发明申请
US20150255950A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT, MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND SEMICONDUCTOR DEVICE 审中-公开
半导体发光元件,半导体发光元件的制造方法和半导体器件

  • 专利标题: SEMICONDUCTOR LIGHT-EMITTING ELEMENT, MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND SEMICONDUCTOR DEVICE
  • 专利标题(中): 半导体发光元件,半导体发光元件的制造方法和半导体器件
  • 申请号: US14633363
    申请日: 2015-02-27
  • 公开(公告)号: US20150255950A1
    公开(公告)日: 2015-09-10
  • 发明人: Kota TokudaTakayuki Kawasumi
  • 申请人: Sony Corporation
  • 优先权: JP2014-046042 20140310
  • 主分类号: H01S5/042
  • IPC分类号: H01S5/042 H01S5/22 H01S5/343
SEMICONDUCTOR LIGHT-EMITTING ELEMENT, MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND SEMICONDUCTOR DEVICE
摘要:
A semiconductor light-emitting element includes a laminated structure which has an active layer between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a first semiconductor layer which includes at least the first conductivity-type semiconductor layer of the laminated structure, an insulation film which is formed on the first semiconductor layer and has an opening, and a second semiconductor layer which is formed on the insulation film and includes at least the second conductivity-type semiconductor layer of the laminated structure. The second semiconductor layer includes a first region facing the opening of the insulation film and a second region not facing the opening, and the second region has a portion with a higher impurity concentration than the first region.
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