发明申请
- 专利标题： PRESSURE SENSOR DEVICE WITH THROUGH SILICON VIA
- 专利标题（中）： 压力传感器装置通过硅通过
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申请号： US14220121申请日： 2014-03-19
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公开(公告)号： US20150270206A1公开(公告)日： 2015-09-24
- 发明人: Wai Yew Lo , Lan Chu Tan
- 申请人： Wai Yew Lo , Lan Chu Tan
- 申请人地址： US TX AUSTIN
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX AUSTIN
- 主分类号： H01L23/495
- IPC分类号： H01L23/495 ; H01L23/00 ; H01L23/31 ; G01L9/00 ; H01L25/16 ; H01L21/56 ; H01L23/053 ; H01L23/48 ; H01L23/16
摘要：
A semiconductor pressure sensor device having a pressure-sensing die electrically connected to a microcontrol unit (MCU) using either through silicon vias (TSVs) or flip-chip bumps. An active surface of the pressure-sensing die is in facing relationship with the MCU. These embodiments avoid the need to used bonds to electrically connect the pressure-sensing die to the MCU, thereby saving time, reducing size, and reducing cost.
公开/授权文献
- US09297713B2 Pressure sensor device with through silicon via 公开/授权日：2016-03-29
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