Invention Application
US20150270262A1 GATE STRUCTURES WITH PROTECTED END SURFACES TO ELIMINATE OR REDUCE UNWANTED EPI MATERIAL GROWTH
有权
具有保护性末端表面以消除或减少未经处理的EPI材料生长的盖结构
- Patent Title: GATE STRUCTURES WITH PROTECTED END SURFACES TO ELIMINATE OR REDUCE UNWANTED EPI MATERIAL GROWTH
- Patent Title (中): 具有保护性末端表面以消除或减少未经处理的EPI材料生长的盖结构
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Application No.: US14731569Application Date: 2015-06-05
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Publication No.: US20150270262A1Publication Date: 2015-09-24
- Inventor: Ruilong Xie , Shom Ponoth , Juntao Li
- Applicant: GLOBALFOUNDRIES Inc. , International Business Machines Corporation
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/423
Abstract:
One method disclosed herein includes, among other things, forming a line-end protection layer in an opening on an entirety of each opposing, spaced-apart first and second end face surfaces of first and second spaced-apart gate electrode structures, respectively, and forming a sidewall spacer adjacent opposing sidewall surfaces of each of the gate electrode structures but not adjacent the opposing first and second end face surfaces having the line-end protection layer positioned thereon.
Public/Granted literature
- US09711503B2 Gate structures with protected end surfaces to eliminate or reduce unwanted EPI material growth Public/Granted day:2017-07-18
Information query
IPC分类:
