发明申请
- 专利标题： Kerf Preparation for Backside Metallization
- 专利标题（中）： 用于背面金属化的Kerf准备
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申请号： US14226666申请日： 2014-03-26
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公开(公告)号： US20150279740A1公开(公告)日： 2015-10-01
- 发明人: Michael Roesner , Manfred Engelhardt , Johann Schmid , Gudrun Stranzl , Joachim Hirschler
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; H01L21/768
摘要：
In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes attaching a substrate to a carrier using an adhesive component and forming a through trench through the substrate to expose the adhesive component. At least a portion of the adhesive component is etched and a metal layer is formed over sidewalls of the through trench.
公开/授权文献
- US09455192B2 Kerf preparation for backside metallization 公开/授权日：2016-09-27
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