Invention Application
- Patent Title: Kerf Preparation for Backside Metallization
- Patent Title (中): 用于背面金属化的Kerf准备
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Application No.: US14226666Application Date: 2014-03-26
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Publication No.: US20150279740A1Publication Date: 2015-10-01
- Inventor: Michael Roesner , Manfred Engelhardt , Johann Schmid , Gudrun Stranzl , Joachim Hirschler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/768
Abstract:
In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes attaching a substrate to a carrier using an adhesive component and forming a through trench through the substrate to expose the adhesive component. At least a portion of the adhesive component is etched and a metal layer is formed over sidewalls of the through trench.
Public/Granted literature
- US09455192B2 Kerf preparation for backside metallization Public/Granted day:2016-09-27
Information query
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