A method for producing a heterojunction solar cell including the following successive steps: providing a substrate made from crystalline semiconductor material, doped with a first type of doping, and provided with a first main face; depositing a first layer of intrinsic amorphous semiconductor material on said first main face of the substrate; and forming a second layer of amorphous semiconductor material on the first layer. The method includes deposition of a barrier layer between the first and second layers, said barrier layer being of different nature from those of the first and second layers and includes doping of the second layer by ion implantation.