Invention Application
- Patent Title: Semiconductor Integrated Circuit
- Patent Title (中): 半导体集成电路
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Application No.: US14670536Application Date: 2015-03-27
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Publication No.: US20150280691A1Publication Date: 2015-10-01
- Inventor: Jun Koyama
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Priority: JP2010-178167 20100806; JP2011-108342 20110513
- Main IPC: H03K3/012
- IPC: H03K3/012 ; H01L27/06 ; H01L29/04 ; G11C5/14 ; H01L29/786
Abstract:
A semiconductor device includes NAND gates and switches to form a circuit to hold data, and a capacitor electrically connected to the circuit via a transistor to store the data held in the circuit. The transistor has a channel formation region including an oxide semiconductor.
Public/Granted literature
- US09479143B2 Semiconductor device Public/Granted day:2016-10-25
Information query
