发明申请
- 专利标题： PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 光伏器件及其制造方法
-
申请号： US14380612申请日： 2012-05-15
-
公开(公告)号： US20150287867A1公开(公告)日： 2015-10-08
- 发明人: Daisuke Sato , Hiroyuki Yaguchi , Shuhei Yagi
- 申请人： Daisuke Sato , Hiroyuki Yaguchi , Shuhei Yagi
- 申请人地址： JP Aichi JP Saitama-shi, Saitama
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA,NATIONAL UNIVERSITY CORPORATION SAITAMA UNIVERSITY
- 当前专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA,NATIONAL UNIVERSITY CORPORATION SAITAMA UNIVERSITY
- 当前专利权人地址： JP Aichi JP Saitama-shi, Saitama
- 优先权： JP2012-042322 20120228
- 国际申请： PCT/JP12/62365 WO 20120515
- 主分类号： H01L31/0693
- IPC分类号： H01L31/0693 ; H01L31/18
摘要：
Provided is a photovoltaic device prepared with a semiconductor including a localized level or an intermediate band in a forbidden band and capable of improving the performance than before. The photovoltaic device includes a plurality of first layers made of a first semiconducting material and a plurality of second layers made of a second semiconducting material that is different from the first semiconducting material, wherein the second semiconducting material includes a localized level or intermediate band in a forbidden band, the first layers and the second layers are alternately laminated one by one, at least two of the second layers are each disposed between a pair of the first layers, and a thickness of each of the second layers is thinner than a thickness of four molecular layers of the first semiconducting material.
公开/授权文献
- US10483422B2 Photovoltaic device and method for manufacturing the same 公开/授权日：2019-11-19
信息查询
IPC分类:
