发明申请
US20150287887A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FORMING ELECTRODE
审中-公开
半导体发光器件及形成电极的方法
- 专利标题： SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FORMING ELECTRODE
- 专利标题（中）： 半导体发光器件及形成电极的方法
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申请号： US14744498申请日： 2015-06-19
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公开(公告)号： US20150287887A1公开(公告)日： 2015-10-08
- 发明人: Tomohisa SATO , Jun MORI
- 申请人： Sharp Kabushiki Kaisha
- 申请人地址： JP Osaka-shi
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka-shi
- 优先权： JP2012-004669 20120113; JP2012-202199 20120914
- 主分类号： H01L33/40
- IPC分类号： H01L33/40
摘要：
A semiconductor light-emitting device having an electrode that can be manufactured by a simple method and is unlikely to deteriorate, and a method for forming the electrode are provided. The semiconductor light-emitting device according to the present invention has a semiconductor layered structure having a light-emitting layer that emits light by supplying electric power and an electrode formed on the semiconductor layered structure. The electrode has a reflection layer that reflects light exiting from the light-emitting layer, a barrier layer formed on the upper side and side surface of the reflection layer, and a pad layer formed only on the top surface of the barrier layer.
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