发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US14436767申请日: 2012-12-21
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公开(公告)号: US20150288357A1公开(公告)日: 2015-10-08
- 发明人: Satoshi Hirose
- 申请人: Satoshi HIROSE
- 申请人地址: JP Toyota-shi, Aichi-ken
- 专利权人: TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人: TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人地址: JP Toyota-shi, Aichi-ken
- 国际申请: PCT/JP2012/083346 WO 20121221
- 主分类号: H03K17/567
- IPC分类号: H03K17/567 ; H01L23/528 ; H01L29/423
摘要:
Two or more pads and are connected to a gate region, so that a pad for applying a gate voltage can be selected. In the case where, for example, the peripheral region is likely to overheat, a turn-on voltage is applied to the first pad to turn on the peripheral region later than the central region, and a turn-off voltage is applied to the second pad to turn off the peripheral region earlier than the central region. The problem that the peripheral region is likely to overheat can be addressed. In the case where the flow of an excess current raises the temperature, the turn-off voltage is applied to the second pad. The problem that the temperature is likely to rise in the peripheral region when an excess current flows can be addressed.
公开/授权文献
- US09553575B2 Semiconductor device 公开/授权日:2017-01-24
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