Invention Application
US20150294967A1 ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERATION
审中-公开
具有隔离SCR的ESD保护电路用于负压运行
- Patent Title: ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERATION
- Patent Title (中): 具有隔离SCR的ESD保护电路用于负压运行
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Application No.: US14750339Application Date: 2015-06-25
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Publication No.: US20150294967A1Publication Date: 2015-10-15
- Inventor: Akram A. Salman , Farzan Farbiz , Amitava Chatterjee , Xiaoju Wu
- Applicant: Texas Instruments Incorporated
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/10 ; H01L29/74
Abstract:
A semiconductor controlled rectifier (FIG. 4A) for an integrated circuit is disclosed. The semiconductor controlled rectifier comprises a first lightly doped region (100) having a first conductivity type (N) and a first heavily doped region (108) having a second conductivity type (P) formed within the first lightly doped region. A second lightly doped region (104) having the second conductivity type is formed proximate the first lightly doped region. A second heavily doped region (114) having the first conductivity type is formed within the second lightly doped region. A buried layer (101) having the first conductivity type is formed below the second lightly doped region and electrically connected to the first lightly doped region. A third lightly doped region (102) having the second conductivity type is formed between the second lightly doped region and the third heavily doped region. A fourth lightly doped region (400) having the second conductivity type is formed between the second lightly doped region and the third heavily doped region and electrically connected to the second and third lightly doped regions.
Public/Granted literature
- US10083951B2 ESD protection circuit with isolated SCR for negative voltage operation Public/Granted day:2018-09-25
Information query
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