Invention Application
- Patent Title: TRANSISTOR HAVING A WING REGION
- Patent Title (中): 有区域的晶体管
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Application No.: US14751999Application Date: 2015-06-26
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Publication No.: US20150295055A1Publication Date: 2015-10-15
- Inventor: Chen-Liang CHU , Fei-Yuh CHEN , Yi-Sheng CHEN , Shih-Kuang HSIAO , Chun Lin TSAI , Kong-Beng THEI
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/78

Abstract:
A transistor includes an isolation region surrounding an active region. The transistor also includes a gate dielectric layer over a portion of the active region. The transistor further includes a gate electrode over the gate dielectric layer. The portion of the active region under the gate dielectric layer includes a channel region between a drain region and a source region, and at least one wing region adjoining the channel region. The at least one wing region has a base edge adjoining the channel region. The at least one wing region is polygonal or curved.
Public/Granted literature
- US09601585B2 Transistor having a wing region Public/Granted day:2017-03-21
Information query
IPC分类: