发明申请
US20150305131A1 STRUCTURE ELECTRON BEAM INSPECTION SYSTEM FOR INSPECTING EXTREME ULTRAVIOLET MASK AND STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK
有权
结构电子束检测系统，用于检测极端的超紫外线掩膜和结构，用于放出极端的超紫外线掩模
- 专利标题： STRUCTURE ELECTRON BEAM INSPECTION SYSTEM FOR INSPECTING EXTREME ULTRAVIOLET MASK AND STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK
- 专利标题（中）： 结构电子束检测系统，用于检测极端的超紫外线掩膜和结构，用于放出极端的超紫外线掩模
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申请号： US14755626申请日： 2015-06-30
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公开(公告)号： US20150305131A1公开(公告)日： 2015-10-22
- 发明人: You-Jin WANG , Chiyan KUAN , Chung-Shih PAN
- 申请人： Hermes Microvision Inc.
- 主分类号： H05F3/02
- IPC分类号： H05F3/02 ; H01J37/02
摘要：
A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
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