METHODS OF FORMING SEMICONDUCTOR DEVICE ASSEMBLIES AND INTERCONNECT STRUCTURES, AND RELATED SEMICONDUCTOR DEVICE ASSEMBLIES AND INTERCONNECT STRUCTURES

Invention Application

US20150340328A1 METHODS OF FORMING SEMICONDUCTOR DEVICE ASSEMBLIES AND INTERCONNECT STRUCTURES, AND RELATED SEMICONDUCTOR DEVICE ASSEMBLIES AND INTERCONNECT STRUCTURES 有权

Title translation: 形成半导体器件组件和互连结构的方法以及相关半导体器件组件和互连结构

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Patent Title: METHODS OF FORMING SEMICONDUCTOR DEVICE ASSEMBLIES AND INTERCONNECT STRUCTURES, AND RELATED SEMICONDUCTOR DEVICE ASSEMBLIES AND INTERCONNECT STRUCTURES
Patent Title (中): 形成半导体器件组件和互连结构的方法以及相关半导体器件组件和互连结构
Application No.: US14282606

Application Date: 2014-05-20
Publication No.: US20150340328A1

Publication Date: 2015-11-26
Inventor: Jaspreet S. Gandhi
Applicant: MICRON TECHNOLOGY, INC.
Applicant Address: US ID Boise
Assignee: MICRON TECHNOLOGY, INC.
Current Assignee: MICRON TECHNOLOGY, INC.
Current Assignee Address: US ID Boise
Main IPC: H01L23/00
IPC: H01L23/00

METHODS OF FORMING SEMICONDUCTOR DEVICE ASSEMBLIES AND INTERCONNECT STRUCTURES, AND RELATED SEMICONDUCTOR DEVICE ASSEMBLIES AND INTERCONNECT STRUCTURES

Abstract:

A method of forming a semiconductor device assembly comprises forming on a first substrate, at least one bond pad comprising a first nickel material over the first substrate, a first copper material on the first nickel material, and a solder-wetting material on the first copper material. On a second substrate is formed at least one conductive pillar comprising a second nickel material, a second copper material directly contacting the second nickel material, and a solder material directly contacting the second copper material. The solder-wetting material is contacted with the solder material. The first copper material, the solder-wetting material, the second copper material, and the solder material are converted into a substantially homogeneous intermetallic compound interconnect structure. Additional methods, semiconductor device assemblies, and interconnect structures are also described.

Abstract(Chinese):

一种形成半导体器件组件的方法包括在第一衬底上形成至少一个焊接垫，该焊盘包括第一衬底上的第一镍材料，第一镍材料上的第一铜材料和第一铜上的焊料润湿材料材料。在第二基板上形成至少一个包括第二镍材料的导电柱，与第二镍材料直接接触的第二铜材料和直接接触第二铜材料的焊料材料。焊料润湿材料与焊料材料接触。将第一铜材料，焊料润湿材料，第二铜材料和焊料材料转化为基本均匀的金属间化合物互连结构。还描述了另外的方法，半导体器件组件和互连结构。

Public/Granted literature

US09520370B2 Methods of forming semiconductor device assemblies and interconnect structures, and related semiconductor device assemblies and interconnect structures Public/Granted day:2016-12-13

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）