Invention Application
- Patent Title: DOUBLE/MULTIPLE FIN STRUCTURE FOR FINFET DEVICES
- Patent Title (中): FINFET器件的双重/多重晶体结构
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Application No.: US14822345Application Date: 2015-08-10
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Publication No.: US20150349054A1Publication Date: 2015-12-03
- Inventor: InSoo JUNG , Wonwoo KIM
- Applicant: GLOBALFOUNDRIES INC.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/161 ; H01L29/78
Abstract:
A method of forming double and/or multiple numbers of fins of a FinFET device using a Si/SiGe selective epitaxial growth process and the resulting device are provided. Embodiments include forming a Si pillar in an oxide layer, the Si pillar having a bottom portion and a top portion; removing the top portion of the Si pillar; forming a SiGe pillar on the bottom portion of the Si pillar; reducing the SiGe pillar; forming a first set of Si fins on opposite sides of the reduced SiGe pillar; removing the SiGe pillar; replacing the Si fins with SiGe fins; reducing the SiGe fins; forming a second set of Si fins on opposite sides of the SiGe fins; and removing the SiGe fins.
Public/Granted literature
- US09461111B2 Double/multiple fin structure for FinFET devices Public/Granted day:2016-10-04
Information query
IPC分类:
