利索-全球专利检索

  1. 登录
  2. 注册
发明申请
US20150349255A1 Array Of Cross Point Memory Cells And Methods Of Forming An Array Of Cross Point Memory Cells 有权
交叉点存储单元阵列和形成数组交叉点存储单元的方法

Array Of Cross Point Memory Cells And Methods Of Forming An Array Of Cross Point Memory Cells
摘要：
An array of cross point memory cells comprises spaced elevationally inner first lines, spaced elevationally outer second lines which cross the first lines, and a multi-resistive state region elevationally between the first and second lines where such cross. Individual of the multi-resistive state regions comprise elevationally outer multi-resistive state material and elevationally inner multi-resistive state material that are electrically coupled to one another. The inner multi-resistive state material has opposing edges in a vertical cross-section. The outer multi-resistive state material has opposing edges in the vertical cross-section that are laterally offset relative to the opposing edges of the inner multi-resistive state material in the vertical cross-section. Methods are also disclosed.
摘要（中）：

交叉点存储单元的阵列包括间隔开的内部第一线，与第一线交叉的间隔开的外部第二直线，以及在第一和第二线之间的高阻状态区域，这样的交叉。 多电阻状态区域的个体包括彼此电耦合的高度外部的多重电阻状态材料和正向内部多电阻状态材料。 内部多阻态材料具有垂直横截面中的相对边缘。 外部多阻态材料在垂直横截面中具有相对于内部多阻态材料的相对边缘在垂直横截面中横向偏移的相对边缘。 还公开了方法。

公开/授权文献
信息查询
Global Dossier Espacenet
0/0