Invention Application
US20150353763A1 Polylactide/Silicon-Containing Block Copolymers for Nanolithography
有权
用于纳米光刻的聚丙交酯/含硅嵌段共聚物
- Patent Title: Polylactide/Silicon-Containing Block Copolymers for Nanolithography
- Patent Title (中): 用于纳米光刻的聚丙交酯/含硅嵌段共聚物
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Application No.: US14827876Application Date: 2015-08-17
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Publication No.: US20150353763A1Publication Date: 2015-12-10
- Inventor: Christopher J. Ellison , Carlton Grant Willson , Julia Cushen , Christopher M. Bates
- Applicant: Board of Regents, The University of Texas System
- Main IPC: C09D167/00
- IPC: C09D167/00
Abstract:
The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.
Public/Granted literature
- US09834700B2 Polylactide/silicon-containing block copolymers for nanolithography Public/Granted day:2017-12-05
Information query
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