A semiconductor device having a capacitor, which provides enhanced reliability. A wiring and a capacitor are formed over an interlayer insulating film overlying a semiconductor substrate and another interlayer insulating film is formed over the interlayer insulating film so as to cover the wiring and capacitor. The capacitor includes a lower electrode overlying the interlayer insulating film, an upper electrode overlying the interlayer insulating film to cover the lower electrode at least partially, and a capacitive insulating film interposed between the lower and upper electrodes. The upper electrode and the wiring are formed from a conductive film pattern in the same layer. A plug is located under, and electrically coupled to, the lower electrode and another plug is located over the upper electrode's portion not overlapping the lower electrode in plan view and electrically coupled to the upper electrode. Another plug is located over, and electrically coupled to, the wiring.