Invention Application
US20150364549A1 SEMICONDUCTOR DEVICE WITH SILICON CARBIDE EMBEDDED DUMMY PATTERN
审中-公开
半导体器件与硅碳化物嵌入式模式
- Patent Title: SEMICONDUCTOR DEVICE WITH SILICON CARBIDE EMBEDDED DUMMY PATTERN
- Patent Title (中): 半导体器件与硅碳化物嵌入式模式
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Application No.: US14301348Application Date: 2014-06-11
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Publication No.: US20150364549A1Publication Date: 2015-12-17
- Inventor: Tung-Hsing Lee , Ming-Tzong Yang , Wei-Che Huang , Cheng-Chou Hung
- Applicant: MEDIATEK INC.
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/06 ; H01L29/78
Abstract:
A semiconductor device with dummy patterns for alleviating micro-loading effect includes a semiconductor substrate having thereon a middle annular region between an inner region and an outer region; a SiC device on the semiconductor substrate within the inner region; and a plurality of dummy patterns provided on the semiconductor substrate within the middle annular region. At least one of the dummy patterns contains SiC.
Information query
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