Invention Application
- Patent Title: METHOD TO ENABLE HIGHER CARBON CO-IMPLANTS TO IMPROVE DEVICE MISMATCH WITHOUT DEGRADING LEAKAGE
- Patent Title (中): 使用更高碳卡共同提高器件误差而不降低漏电的方法
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Application No.: US14732769Application Date: 2015-06-07
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Publication No.: US20150364600A1Publication Date: 2015-12-17
- Inventor: Ebenezer Eshun
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
An integrated circuit containing an NMOS transistor with a boron-doped halo is formed by co-implanting carbon in at least three angled doses with the boron halo implants. The carbon is co-implanted at tilt angles within 5 degrees of the boron halo implant tilt angle. An implant energy of at least one of the angled carbon co-implant is greater than the implant energy of the boron halo implant. A total carbon dose of the angled carbon co-implants is at least 5 times a total boron dose of the boron halo implants. The NMOS transistor has a carbon concentration in the halo regions which is at least 5 times greater than the boron concentration in the halo regions. The co-implanted carbon extends under the gate of the NMOS transistor.
Public/Granted literature
- US09431533B2 Method to enable higher carbon co-implants to improve device mismatch without degrading leakage Public/Granted day:2016-08-30
Information query
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