A photoelectric conversion element according to the present invention includes a photoelectric conversion layer. The photoelectric conversion layer includes a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer which is interposed between the p-type semiconductor layer and the n-type semiconductor layer. The superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum layers are stacked alternately and repeatedly, and is provided so as to form an intermediate energy band between an upper end of a valence band of the barrier layer and a lower end of a conduction band of the barrier layer. The intermediate energy band is formed from a region of the superlattice semiconductor layer, which is near to the p-type semiconductor layer, to a region of the superlattice semiconductor layer, which is near to the n-type semiconductor layer, and the intermediate energy band has a region having a wide band width and a region having a narrow band width.