Invention Application
- Patent Title: METHOD FOR FORMING ORGANIC SEMICONDUCTOR FILM
- Patent Title (中): 形成有机半导体膜的方法
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Application No.: US14835317Application Date: 2015-08-25
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Publication No.: US20150364686A1Publication Date: 2015-12-17
- Inventor: Yoshiki MAEHARA , Yoshihisa USAMI
- Applicant: FUJIFILM CORPORATION
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM CORPORATION
- Current Assignee: FUJIFILM CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2013-050638 20130313
- Main IPC: H01L51/00
- IPC: H01L51/00

Abstract:
A method for forming an organic semiconductor film includes: forming a solution film by applying a solution containing an organic semiconductor material and a solvent to at least a part of a substrate; and drying the solution film by irradiating at least a part of the solution film with electromagnetic waves with a wavelength of at least 8 μm and an energy density of from 0.1 to 10 J/cm2 on the surface of the solution film before the solution film dries. An organic semiconductor film having good crystallinity can be formed by the method.
Public/Granted literature
- US09680099B2 Method for forming organic semiconductor film Public/Granted day:2017-06-13
Information query
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