Invention Application
US20150380262A1 SUB-LITHOGRAPHIC SEMICONDUCTOR STRUCTURES WITH NON-CONSTANT PITCH
有权
具有非常数PITCH的次平面半导体结构
- Patent Title: SUB-LITHOGRAPHIC SEMICONDUCTOR STRUCTURES WITH NON-CONSTANT PITCH
- Patent Title (中): 具有非常数PITCH的次平面半导体结构
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Application No.: US14843085Application Date: 2015-09-02
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Publication No.: US20150380262A1Publication Date: 2015-12-31
- Inventor: Marc A. Bergendahl , David V. Horak , Charles W. Koburger, III , Shom Ponoth , Chih-Chao Yang
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/3065
Abstract:
Fin structures and methods of manufacturing fin structures using a dual-material sidewall image transfer mask to enable patterning of sub-lithographic features is disclosed. The method of forming a plurality of fins includes forming a first set of fins having a first pitch. The method further includes forming an adjacent fin to the first set of fins. The adjacent fin and a nearest fin of the first set of fins have a second pitch larger than the first pitch. The first set of fins and the adjacent fin are sub-lithographic features formed using a sidewall image transfer process.
Public/Granted literature
- US09263290B2 Sub-lithographic semiconductor structures with non-constant pitch Public/Granted day:2016-02-16
Information query
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