发明申请
US20160013215A1 COATING LIQUID FOR PRODUCING N-TYPE OXIDE SEMICONDUCTOR, FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
审中-公开
用于生产N型氧化物半导体的涂料液体，场效应晶体管，显示元件，图像显示装置和系统
- 专利标题： COATING LIQUID FOR PRODUCING N-TYPE OXIDE SEMICONDUCTOR, FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
- 专利标题（中）： 用于生产N型氧化物半导体的涂料液体，场效应晶体管，显示元件，图像显示装置和系统
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申请号： US14795234申请日： 2015-07-09
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公开(公告)号： US20160013215A1公开(公告)日： 2016-01-14
- 发明人: Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
- 申请人： Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
- 优先权： JP2014-142953 20140711; JP2015-111494 20150601
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; G09G3/22 ; C09D5/24 ; H01L29/786 ; H01L29/24
摘要：
A field-effect transistor, including: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode configured to take out electric current; an active layer formed of a n-type oxide semiconductor, and provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor includes at least one selected from the group consisting of Re, Ru, and Os as a dopant.
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