Invention Application
US20160020199A1 SEMICONDUCTOR STRUCTURE WITH SPARE CELL REGION 审中-公开
具有细胞区域的半导体结构

  • Patent Title: SEMICONDUCTOR STRUCTURE WITH SPARE CELL REGION
  • Patent Title (中): 具有细胞区域的半导体结构
  • Application No.: US14331233
    Application Date: 2014-07-15
  • Publication No.: US20160020199A1
    Publication Date: 2016-01-21
  • Inventor: Chih-Hsin FuYu-Tung Chang
  • Applicant: Mediatek Inc.
  • Main IPC: H01L27/02
  • IPC: H01L27/02 H01L23/528
SEMICONDUCTOR STRUCTURE WITH SPARE CELL REGION
Abstract:
A semiconductor structure includes a first spare cell region, a first conductive line and a second conductive line. The first spare cell region has a plurality of spare cells. The first conductive line is coupled between a first reference voltage and the plurality of spare cells, and is arranged for providing the first reference voltage to the plurality of spare cells of the first spare cell region. The second conductive line is coupled to a plurality of spare cells, and is arranged for providing a second reference voltage to the plurality of spare cells of the first spare cell region.
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