• 专利标题: RESISTIVE MEMORY DEVICE CAPABLE OF INCREASING SENSING MARGIN BY CONTROLLING INTERFACE STATES OF CELL TRANSISTORS
  • 申请号: US14878629
    申请日: 2015-10-08
  • 公开(公告)号: US20160027506A1
    公开(公告)日: 2016-01-28
  • 发明人: Jae-Kyu LeeDae-Won Kim
  • 申请人: Jae-Kyu LeeDae-Won Kim
  • 优先权: KR10-2013-0149391 20131203
  • 主分类号: G11C13/00
  • IPC分类号: G11C13/00
RESISTIVE MEMORY DEVICE CAPABLE OF INCREASING SENSING MARGIN BY CONTROLLING INTERFACE STATES OF CELL TRANSISTORS
摘要:
Memory systems can include a memory device having an array of nonvolatile memory cells therein, which is electrically coupled to a plurality of bit lines and a plurality of word lines. The nonvolatile memory cells may include respective nonvolatile resistive devices electrically coupled in series with corresponding cell transistors. A controller is also provided, which may be coupled to the memory device. The controller can be configured to drive the memory device with signals that support dual programming of: (i) the nonvolatile resistive devices; and (ii) interface states within the cell transistors, during operations to write data into the memory device.
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