Invention Application
- Patent Title: SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS
- Patent Title (中): 半导体器件及其制造方法及显示器件
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Application No.: US14585525Application Date: 2014-12-30
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Publication No.: US20160035754A1Publication Date: 2016-02-04
- Inventor: Dongjo KIM , Myounggeun CHA , Yoonho KHANG , Soyoung KOO
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Priority: KR10-2014-0099976 20140804
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/02 ; H01L27/32 ; H01L29/786
Abstract:
Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.
Public/Granted literature
- US09263470B1 Semiconductor device, manufacturing method thereof, and display apparatus Public/Granted day:2016-02-16
Information query
IPC分类:
