Invention Application
- Patent Title: UNIAXIALLY-STRAINED FD-SOI FINFET
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Application No.: US14447678Application Date: 2014-07-31
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Publication No.: US20160035820A1Publication Date: 2016-02-04
- Inventor: Pierre Morin , Maud Vinet , Laurent Grenouillet , Ajey Poovannummoottil Jacob
- Applicant: STMicroelectronics, Inc. , Commissariat a l'Energie Atomique et aux Energies Alternatives , GLOBALFOUNDRIES Inc.
- Applicant Address: US TX Coppell FR Paris KY Grand Cayman
- Assignee: STMicroelectronics, Inc.,Commissariat a l'Energie Atomique et aux Energies Alternatives,GLOBALFOUNDRIES Inc.
- Current Assignee: STMicroelectronics, Inc.,Commissariat a l'Energie Atomique et aux Energies Alternatives,GLOBALFOUNDRIES Inc.
- Current Assignee Address: US TX Coppell FR Paris KY Grand Cayman
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/66

Abstract:
Methods and structures for forming uniaxially-strained, nanoscale, semiconductor bars from a biaxially-strained semiconductor layer are described. A spatially-doubled mandrel process may be used to form a mask for patterning dense, narrow trenches through the biaxially-strained semiconductor layer. The resulting slicing of the biaxially-strained layer enhances carrier mobility and can increase device performance.
Public/Granted literature
- US09252208B1 Uniaxially-strained FD-SOI finFET Public/Granted day:2016-02-02
Information query
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