Invention Application
US20160035823A1 SEMICONDUCTOR DEVICE 有权
半导体器件

SEMICONDUCTOR DEVICE
Abstract:
A semiconductor device includes a substrate, a gate positioned on the substrate, a drain region and a source region formed in the substrate at two respectively sides of the gate, a first well region formed in the substrate, and a plurality of first doped islands formed in the source region. The drain region and the source region include a first conductivity, and the first well region and the first doped islands include a second conductivity. The source region is formed in the first well region, and the first doped islands are spaced apart from the first well region.
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