Invention Application
- Patent Title: OXIDE THIN FILM TRANSISTOR, ARRAY SUBSTRATE, METHODS OF MANUFACTURING THE SAME AND DISPLAY DEVICE
- Patent Title (中): 氧化物薄膜晶体管,阵列基板,其制造方法和显示装置
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Application No.: US14535772Application Date: 2014-11-07
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Publication No.: US20160035894A1Publication Date: 2016-02-04
- Inventor: Can WANG , Fang LIU
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Priority: CN201410367658.6 20140729
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L21/02 ; H01L29/66 ; H01L29/24

Abstract:
An oxide thin film transistor, an array substrate, methods of manufacturing the same and a display device are disclosed. The oxide thin film transistor includes: a base substrate; and a gate electrode, a gate insulating layer, an oxide active layer, drain/source electrodes sequentially disposed on the base substrate. The oxide TFT transistor further includes an ultraviolet barrier layer disposed on the oxide active layer, the ultraviolet barrier layer is made of a resin material contains an ultraviolet absorbent. The stability of the oxide TFT is enhanced by disposing the ultraviolet barrier layer over the oxide active layer of the oxide TFT, since the ultraviolet barrier layer blocks the impact of UV light on the oxide TFT.
Public/Granted literature
- US09627546B2 Oxide thin film transistor, array substrate, methods of manufacturing the same and display device Public/Granted day:2017-04-18
Information query
IPC分类: