发明申请
- 专利标题: X-RAY DETECTOR
- 专利标题(中): X射线探测器
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申请号: US14725429申请日: 2015-05-29
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公开(公告)号: US20160041274A1公开(公告)日: 2016-02-11
- 发明人: Jaechul PARK , Sunil KIM , Dongwook LEE , Changbum LEE
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 优先权: KR10-2014-0101102 20140806
- 主分类号: G01T1/24
- IPC分类号: G01T1/24 ; H01L31/0272 ; H01L31/032 ; H01L27/146
摘要:
An X-ray detector may include: a thin film transistor (TFT) unit; and/or a capacitor unit. The capacitor unit may include two or more storage capacitors. The TFT unit may include: a gate electrode on one region of a substrate; a gate insulating layer on the gate electrode; an active layer on the gate insulating layer; and/or a source electrode and a drain electrode respectively on sides of the active layer.
公开/授权文献
- US09470803B2 X-ray detector 公开/授权日:2016-10-18
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