Invention Application
US20160043009A1 Power Semiconductor Module 有权
功率半导体模块

  • Patent Title: Power Semiconductor Module
  • Patent Title (中): 功率半导体模块
  • Application No.: US14921587
    Application Date: 2015-10-23
  • Publication No.: US20160043009A1
    Publication Date: 2016-02-11
  • Inventor: Harald Beyer
  • Applicant: ABB Technology AG
  • Priority: EP13165536.7 20130426
  • Main IPC: H01L21/66
  • IPC: H01L21/66 H01L25/16
Power Semiconductor Module
Abstract:
A power semiconductor module, including a housing and a substrate having at least one conductive path is located, at least one power semiconductor device arranged on said conductive path at least one contact, a self-sustaining system for detecting a physical parameter or a chemical substance, a device for wireless transmitting data provided by the sensor, and an energy source. The sensor detects at least one of current, voltage magnetic fields, mechanical stress, and humidity. The power semiconductor module may be part of an electronic device.
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