Invention Application
- Patent Title: Power Semiconductor Module
- Patent Title (中): 功率半导体模块
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Application No.: US14921587Application Date: 2015-10-23
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Publication No.: US20160043009A1Publication Date: 2016-02-11
- Inventor: Harald Beyer
- Applicant: ABB Technology AG
- Priority: EP13165536.7 20130426
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L25/16

Abstract:
A power semiconductor module, including a housing and a substrate having at least one conductive path is located, at least one power semiconductor device arranged on said conductive path at least one contact, a self-sustaining system for detecting a physical parameter or a chemical substance, a device for wireless transmitting data provided by the sensor, and an energy source. The sensor detects at least one of current, voltage magnetic fields, mechanical stress, and humidity. The power semiconductor module may be part of an electronic device.
Public/Granted literature
- US09559024B2 Power semiconductor module Public/Granted day:2017-01-31
Information query
IPC分类: