A magnetic memory device is provided. The magnetic memory device includes a substrate including a first source/drain region and a second source/drain region; a word line structure between the first and source/drain regions and extending in a first direction; a buried contact electrically connected to the first source/drain region and on the first source/drain region; a contact pad electrically connected to the buried contact and on the buried contact; and a memory portion electrically connected to the contact pad and on the contact pad, the contact pad including a metal silicide layer.