Invention Application
- Patent Title: METHOD FOR GROWING CARBON NANOTUBES
- Patent Title (中): 生长碳纳米管的方法
-
Application No.: US14779577Application Date: 2014-03-26
-
Publication No.: US20160046492A1Publication Date: 2016-02-18
- Inventor: Takashi MATSUMOTO , Kenjiro KOIZUMI
- Applicant: TOKYO ELECTRON LIMITED
- Priority: JP2013-070187 20130328
- International Application: PCT/JP2014/059701 WO 20140326
- Main IPC: C01B31/02
- IPC: C01B31/02 ; H01L21/768 ; H01L21/285

Abstract:
Provided is a method for growing carbon nanotubes that enables the growth of high-density carbon nanotubes. A high frequency bias voltage is applied to a loading table on which a wafer W having a catalytic metal layer is mounted to generate a bias potential on the surface of the wafer W, and oxygen plasma is used to micronize the catalytic metal layer to form catalytic metal particles. Thereafter, hydrogen plasma is used to reduce the surface of the catalytic metal particles to form activated catalytic metal particles having an activated surface. By using each activated catalytic metal particles as a nucleus, carbon nanotubes are formed.
Public/Granted literature
- US09850132B2 Method for growing carbon nanotubes Public/Granted day:2017-12-26
Information query