A method of fabricating an X-ray imager including the steps of forming an etch stop layer on a glass substrate and depositing a stack of semiconductor layers on the etch stop layer to form a sensor plane. Separating the stack into an array of PIN photodiodes. Depositing a layer of insulating material on the array to form a planarized surface and forming vias through the insulating layer into communication with an upper surface of each photodiode and forming metal contacts on the planarized surface through the vias in contact with each photodiode. Fabricating an array of MOTFTs in an active pixel sensor configuration backplane on the planarized surface and in electrical communication with the contacts, to provide a sensor plane/MOTFT backplane interconnected combination. Attaching a flexible support carrier to the MOTFT backplane and removing the glass substrate. A scintillator is then laminated on the array of photodiodes.