Invention Application
- Patent Title: PLASMA APPARATUS AND METHOD OF OPERATING THE SAME
- Patent Title (中): 等离子体装置及其操作方法
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Application No.: US14799588Application Date: 2015-07-15
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Publication No.: US20160056017A1Publication Date: 2016-02-25
- Inventor: Moojin KIM , Bongseong KIM , Unjoo LEE
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2014-0107847 20140819
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A plasma apparatus includes a chuck disposed in a process chamber, a gas supply unit supplying a process gas into the process chamber, a plasma generating unit configured to generate plasma over the chuck, a direct current (DC) power generator applying a DC pulse signal to the chuck, and a sensor monitoring a state of the plasma and providing a sensing signal to the DC power generator. Each period of the DC pulse signal includes a negative pulse duration, a positive pulse duration, and a pulse-off duration. If a signal disturbance of the sensing signal occurs in an nth period of the DC pulse signal, the DC power generator changes a magnitude of a positive pulse and/or a length of the positive pulse duration of an n+1th period of the DC pulse signal, where “n” denotes a natural number.
Public/Granted literature
- US09704690B2 Plasma apparatus and method of operating the same Public/Granted day:2017-07-11
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