Invention Application
- Patent Title: SINGLE-PHOTON AVALANCHE DIODE AND AN ARRAY THEREOF
- Patent Title (中): 单光子AVALANCHE二极管及其阵列
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Application No.: US14781333Application Date: 2014-06-20
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Publication No.: US20160056185A1Publication Date: 2016-02-25
- Inventor: Stuart MCLEOD , Pascal MELLOT , Lindsay GRANT
- Applicant: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED , STMICROELECTRONICS (GRENOBLE 2) SAS
- Priority: GB1311055.6 20130621
- International Application: PCT/GB2014/051895 WO 20140620
- Main IPC: H01L27/144
- IPC: H01L27/144 ; H01L31/18 ; H01L31/107 ; G01J1/44 ; G01J1/42
Abstract:
A Single-Photon Avalanche Diode (SPAD) is disclosed. The SPAD may include an active region for detection of incident radiation, and a cover configured to shield part of the active region from the incident radiation. An array is also disclosed and includes SPADs arranged in rows and columns. A method for making the SPAD is also disclosed.
Public/Granted literature
- US09960295B2 Single-photon avalanche diode and an array thereof Public/Granted day:2018-05-01
Information query
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