发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US14932538申请日： 2015-11-04
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公开(公告)号： US20160056305A1公开(公告)日： 2016-02-25
- 发明人: Alexander Dietrich Holke , Deb Kumar Pal , Kia Yaw Kee , Yang Hao
- 申请人： Alexander Dietrich Holke , Deb Kumar Pal , Kia Yaw Kee , Yang Hao
- 申请人地址： DE Efurt
- 专利权人： X-Fab Semiconductor Foundries AG
- 当前专利权人： X-Fab Semiconductor Foundries AG
- 当前专利权人地址： DE Efurt
- 优先权： IBPCT/IB2009/052160 20090522
- 主分类号： H01L29/868
- IPC分类号： H01L29/868 ; H01L29/40
摘要：
A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.
公开/授权文献
- US09653620B2 Semiconductor device 公开/授权日：2017-05-16
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