Invention Application
- Patent Title: P-FET WITH GRADED SILICON-GERMANIUM CHANNEL
- Patent Title (中): 具有分级硅锗通道的P-FET
-
Application No.: US14934191Application Date: 2015-11-06
-
Publication No.: US20160064210A1Publication Date: 2016-03-03
- Inventor: Kangguo Cheng , Ali Khakifirooz , Darsen D. Lu , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/306
Abstract:
A method of forming a semiconductor structure includes etching a semiconductor region of a substrate to form a thinned semiconductor region, and forming a silicon-germanium layer on the thinned semiconductor region, the silicon-germanium layer having a graded concentration profile of germanium atoms.
Information query
IPC分类:
