Invention Application
US20160064286A1 INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS
审中-公开
集成电路及其集成电路的制作方法
- Patent Title: INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS
- Patent Title (中): 集成电路及其集成电路的制作方法
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Application No.: US14476031Application Date: 2014-09-03
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Publication No.: US20160064286A1Publication Date: 2016-03-03
- Inventor: Gabriela Dilliway , Bo Bai , Peter Javorka , Dina H. Triyoso
- Applicant: GLOBALFOUNDRIES, Inc.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092

Abstract:
Methods for fabricating integrated circuits and components thereof are provided. In accordance with an exemplary embodiment, a method for fabricating an integrated circuit is provided. The method includes providing a semiconductor substrate with a first gate structure and a second gate structure and a shallow trench isolation region outside of the first and second gate structures, depositing a mask on the first gate structure, and depositing a protection layer on the shallow trench isolation region to embed a STI protective cap.
Information query
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