Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14494607Application Date: 2014-09-24
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Publication No.: US20160064327A1Publication Date: 2016-03-03
- Inventor: Ching-Ling Lin , Chih-Sen Huang , Ching-Wen Hung , Jia-Rong Wu , Tsung-Hung Chang , Yi-Hui Lee , Yi-Wei Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Priority: CN201410430805.X 20140828
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L21/768
Abstract:
A semiconductor device is disclosed. The semiconductor device includes: a substrate; a first metal gate on the substrate; a first hard mask on the first metal gate; an interlayer dielectric (ILD) layer on top of and around the first metal gate; and a patterned metal layer embedded in the ILD layer, in which the top surface of the patterned metal layer is lower than the top surface of the first hard mask.
Public/Granted literature
- US09466521B2 Semiconductor device having a patterned metal layer embedded in an interlayer dielectric layer Public/Granted day:2016-10-11
Information query
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