Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14836688Application Date: 2015-08-26
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Publication No.: US20160064344A1Publication Date: 2016-03-03
- Inventor: Akira YAJIMA
- Applicant: Renesas Electronics Corporation
- Priority: JP2014-173454 20140828
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
The present invention makes it possible to: reduce the manufacturing cost of a semiconductor device having a redistribution layer; and further improve the reliability of a semiconductor device having a redistribution layer.A feature point of First Embodiment is that an opening and a redistribution layer gutter are formed integrally in a polyimide resin film of a single layer as shown in FIG. 5. It is thereby possible to: form a redistribution layer in the polyimide resin film of a single layer; and hence inhibit a wiring material (silver) including the redistribution layer from migrating.
Public/Granted literature
- US09496232B2 Semiconductor device and its manufacturing method Public/Granted day:2016-11-15
Information query
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